r37980778c78--a87b6d9188dcd2acacdf94151308f65d

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm2/(V s) at room temperature) on SiC(0001̅) and show that carrier mobility depends strongly on the graphene layer stacking.

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PID https://www.doi.org/10.1021/nl901073g.s001
URL https://figshare.com/articles/journal_contribution/Correlating_Raman_Spectral_Signatures_with_Carrier_Mobility_in_Epitaxial_Graphene_A_Guide_to_Achieving_High_Mobility_on_the_Wafer_Scale/2836213
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Collected From figshare
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Publication Date 2016-02-26
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Language UNKNOWN
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Source https://science-innovation-policy.openaire.eu/search/publication?articleId=r37980778c78::a87b6d9188dcd2acacdf94151308f65d
Author jsonws_user
Last Updated 23 December 2020, 05:59 (CET)
Created 23 December 2020, 05:59 (CET)