-
Reversible Metal-Semiconductor Transition of ssDNA-Decorated Single-Walled Ca...
A field effect transistor (FET) measurement of a SWNT shows a transition from a metallic one to a p-type semiconductor after helical wrapping of DNA. Water is found to be... -
Transforming Carbon Nanotube Devices into Nanoribbon Devices
Reported here is an extension of the nanotube longitudinal unzipping process to convert electrode-bound multiwalled carbon nanotube (MWCNT) devices into graphene nanoribbon... -
r37980778c78--cbd5399fb9c162f6ed5f07c6a4b066ee
Single-walled carbon nanotubes (SWNTs) were successfully grown on SiO2/Si substrates at 450 °C by remote plasma enhanced chemical vapor deposition with a plasma power of 15 W.... -
Synthesis, Structure, and Isomerization of Decapentynylcorannulene: Enediyne...
Decapentynylcorannulene (5) is prepared via aryl−alkyne coupling chemistry of decachlorocorannulene and trimethylstannylpentyne. The crystal structure of 5 is compared with the... -
r37980778c78--0759b07220a93eea2e53a7a311d37f69
We have used field-effect transistor (FET) devices with semiconducting single-walled carbon nanotubes (SWNTs) as the conducting channels to study interactions of aromatic... -
Are Carbon Nanotubes Viable Materials for the Electrochemical Storage of Hydr...
The electrochemical storage of hydrogen on a range of carbon nanotubes has been investigated using electrochemical techniques and in situ Raman spectroelectrochemistry. An... -
A Highly Elastic, Capacitive Strain Gauge Based on Percolating Nanotube Networks
We present a highly elastic strain gauge based on capacitive sensing of parallel, carbon nanotube-based percolation electrodes separated by a dielectric elastomer. The... -
Ozonization at the Vacancy Defect Site of the Single-Walled Carbon Nanotube
The ozonization at the vacancy defect site of the single-walled carbon nanotube has been studied by static quantum mechanics and atom-centered density matrix propagation based... -
r37980778c78--0bdc7b850d37abcf687e73dc56434002
In this study, we report for the first time a simple bar-coating process of soluble metal oxide semiconductors, consuming the 0.1 g of precursor solution in 4 in. sized devices...
